The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Sep. 11, 2017
Applicant:
Northeastern University, Boston, MA (US);
Inventors:
Swastik Kar, Belmont, MA (US);
Ji Hao, Boston, MA (US);
Daniel Rubin, Boston, MA (US);
Yung Joon Jung, Lexington, MA (US);
Assignee:
Northeastern University, Boston, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 5/16 (2006.01); C01B 32/194 (2017.01); H01L 29/06 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
B32B 5/16 (2013.01); C01B 32/194 (2017.08); H01L 29/068 (2013.01); H01L 29/0673 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01);
Abstract
Ion-doped two-dimensional nanomaterials are made by inducing electronic carriers (electrons and holes) in a two-dimensional material using a captured ion layer at the surface of the material. The captured ion layer is stabilized using a capping layer. The induction of electronic carriers works in atomically-thin two-dimensional materials, where it induces high carrier density of at least 10carriers/cm. A variety of novel ion-doped nanomaterials and p-n junction-based nanoelectronic devices are made possible by the method.