The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Feb. 17, 2020
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Jae Y. Park, Newark, CA (US);

Arnaud Laflaquière, Singapore, SG;

Christophe Vérove, Grenoble, FR;

Fei Tan, San Jose, CA (US);

Assignee:

APPLE INC., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18308 (2013.01); H01S 5/18358 (2013.01); H01S 5/18366 (2013.01); H01S 5/18369 (2013.01); H01S 5/3095 (2013.01); H01S 5/34313 (2013.01); H01S 5/426 (2013.01);
Abstract

An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.


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