The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Oct. 31, 2019
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Toru Takayama, Toyama, JP;
Tohru Nishikawa, Toyama, JP;
Tougo Nakatani, Toyama, JP;
Katsuya Samonji, Toyama, JP;
Takashi Kano, Shiga, JP;
Shinji Ueda, Toyama, JP;
NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto, JP;
Abstract
A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlGaN substrate (0≤x≤1) and a multilayer structure above the AlGaN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlGaN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlGaN substrate.