The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Nov. 20, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Milan Pe{hacek over (s)}ić, Berlin, DE;

Luca Larcher, Reggio Emilia, IT;

Bastien Beltrando, Marseilles, FR;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); G11C 11/56 (2006.01); G06N 3/04 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1286 (2013.01); G11C 11/5685 (2013.01); G11C 13/003 (2013.01); H01L 27/2409 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1266 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); G06N 3/04 (2013.01);
Abstract

A resistive random-access memory (ReRAM) device may include a thermally engineered layer that is positioned adjacent to an active layer and configured to act as a heat sink during filament formation in response to applied voltages. The thermally engineered layer may act as one of the electrodes on the ReRAM device and may be adjacent to any side of the active layer. The active layer may also include a plurality of individual active layers. Each of the active layers may be associated with a different dielectric constant, such that the middle active layer has a dielectric constant that is significantly higher than the other two surrounding active layers.


Find Patent Forward Citations

Loading…