The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Aug. 14, 2020
Applicant:

Nikkiso Co., Ltd., Tokyo, JP;

Inventors:

Yusuke Matsukura, Ishikawa, JP;

Tetsuhiko Inazu, Ishikawa, JP;

Cyril Pernot, Ishikawa, JP;

Assignee:

Nikkiso Co., Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01S 5/343 (2006.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/14 (2013.01); H01S 5/343 (2013.01);
Abstract

A nitride semiconductor light-emitting element includes an active layer that emits ultraviolet light, a p-type AlGaN-based electron blocking stack body that is located on the active layer and has a structure formed by sequentially stacking a first electron blocking layer, a second electron blocking layer and a third electron blocking layer from the active layer side, and a p-type contact layer located on the electron blocking stack body. An Al composition ratio in the second electron blocking layer is lower than an Al composition ratio in the first electron blocking layer, and an Al composition ratio in the third electron blocking layer decreases from the second electron blocking layer side toward the p-type contact layer side.


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