The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Nov. 22, 2019
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventor:
Johan Rothman, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 21/00 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01);
Abstract
An avalanche photodiode including an absorption region, a collection region and a multiplication region between the absorption region and the collection region that performs a carrier multiplication by impact ionisation of a single type of carrier. The multiplication region includes a plurality of multilayer structures where each multilayer structure includes, from the absorption region to the collection region, an acceleration layer having a first energy band gap then a multiplication layer having a second energy band gap. The first energy band gap is greater than the second energy band gap.