The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Sep. 03, 2020
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Weiping Li, Pleasanton, CA (US);

Arnaud Laflaquière, Paris, FR;

Chinhan Lin, Cupertino, CA (US);

Fei Tan, Santa Clara, CA (US);

Tong Chen, Cupertino, CA (US);

Xiaolong Fang, Fremont, CA (US);

Assignee:

APPLE INC., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0232 (2014.01); H01L 31/09 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 31/02327 (2013.01); H01L 31/03046 (2013.01); H01L 31/09 (2013.01);
Abstract

An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.


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