The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Oct. 27, 2020
Lawrence Livermore National Security, Llc, Livermore, CA (US);
Bae Systems Land & Armaments L.p., Sterling Heights, MI (US);
The Government of the United States, As Represented BY the Secretary of the Army, Washington, DC (US);
Lars F. Voss, Livermore, CA (US);
Adam M. Conway, Livermore, CA (US);
Luis M. Hernandez, Coon Rapids, MI (US);
Mark S. Rader, Huntsville, AL (US);
Lawrence Livermore National Security, LLC, Livermore, CA (US);
BAE Systems Land & Armaments L.P., Sterling Heights, MI (US);
The Government of the United States, as represented by the Secretary of the Army, Washington, DC (US);
Abstract
Devices, methods and techniques are disclosed for providing a multi-layer diode without voids between layers. In one example aspect, a multi-stack diode includes at least two Drift Step Recovery Diodes (DSRDs). Each DSRD comprises a first layer having a first type of dopant, a second layer forming a region with at least ten times lower concentration of dopants compared to the adjacent layers, and a third layer having a second type of dopant that is opposite to the first type of dopant. The first layer of a second DSRD is positioned on top of the third layer of first DSRD. The first layer of the second DSRD and the third layer of the first DSRD are degenerate to form a tunneling diode at an interface of the first DSRD and second DSRD, the tunneling diode demonstrating a linear current-voltage characteristic.