The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Mar. 19, 2019
Rutgers, the State University of New Jersey, New Brunswick, NJ (US);
Yicheng Lu, Piscataway, NJ (US);
Wen-Chiang Hong, Piscataway, NJ (US);
Xiaolong Du, Beijing, CN;
Yonghui Zhang, Beijing, CN;
Zengxia Mei, Beijing, CN;
Rutgers, The State University of New Jersey, New Brunswick, NJ (US);
Abstract
Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 μA, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.