The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Aug. 23, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Jens Peter Konrath, Villach, AT;
Caspar Leendertz, Munich, DE;
Larissa Wehrhahn-Kilian, Erlangen, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/739 (2006.01); H01L 21/04 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/02529 (2013.01); H01L 21/0455 (2013.01); H01L 29/1608 (2013.01); H01L 29/47 (2013.01); H01L 29/7397 (2013.01); H01L 29/7827 (2013.01);
Abstract
An embodiment of a semiconductor device comprises a SiC semiconductor body, a gate dielectric and a gate electrode. A first trench extends from a first surface of the SiC semiconductor body into the SiC semiconductor body. A junction material is in the first trench, wherein the junction material and the SiC semiconductor body form a diode.