The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Nov. 13, 2019
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Shunsuke Sakamoto, Fukuoka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 23/00 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 24/45 (2013.01); H01L 29/42304 (2013.01); H01L 29/7395 (2013.01); H01L 2924/13055 (2013.01);
Abstract

A semiconductor device capable of suppressing the calorific value at the central portion of a wire bonding area is provided. A semiconductor device includes a plurality of IGBT cells in a cell area. An emitter electrode serves as a current path when a plurality of IGBT cells are in conductive state, and is formed to cover a plurality of IGBT cells. A wire is bonded to the emitter electrode. A dummy cell which does not perform a bipolar operation, is formed at least below a central portion of a wire bonding area which is an area at which the wire and the emitter electrode are bonded.


Find Patent Forward Citations

Sakamoto, Shunsuke. (2022). Semiconductor device (U.S. Patent No. 11322586). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11322586

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…