The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Aug. 31, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Shoko Hanagata, Komatsu Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor layer. The semiconductor layer has bottom and upper surfaces opposite to each other in a first direction. The semiconductor layer includes a first region of a first conductivity type at the bottom surface, a second region of the first conductivity type at the bottom surface surrounding the first region, a third region of the first conductivity type above the first and second regions, and a fourth region of a second conductivity type extending from the upper surface into the third region. In a first cross sectional plane along the first direction, an outer edge of the first region is within an outer edge of the fourth region by a first distance. In a second cross sectional plane along the first direction, an outer edge of the first region is within an outer edge of the fourth region by a second distance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile