The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Aug. 03, 2020
Fuji Electric Co., Ltd., Kawasaki, JP;
Takeyoshi Nishimura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device, including a parallel pn layer formed on a semiconductor substrate, and an insulated gate structure provided on the parallel pn layer. The parallel pn layer includes a plurality of first regions and a plurality of second regions disposed repeatedly alternating one another along a first direction that is parallel to an upper surface of the semiconductor substrate. Each of the first regions and second regions has, along the first direction, an impurity concentration that has a maximum value thereof at a peak position and that decreases gradually from the peak position. Each of the first regions and second regions has, along a depth direction thereof, a first part and a second part, a gradient of the impurity concentration along the first direction being respectively symmetrical and asymmetrical in the first part and in the second part, with respect to the peak position.