The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Sep. 09, 2020
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventor:

Kenichi Matsushita, Nonoichi Ishikawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/0638 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first, second, and third electrodes, first and fourth semiconductor regions of a first conductivity type, and second and third semiconductor regions of a second conductivity type. The third semiconductor region is provided around the second semiconductor region along a first plane crossing a first direction from the first electrode toward the first semiconductor region and is separated from the second semiconductor region. The fourth semiconductor region is provided around the third semiconductor region along the first plane, and has a greater impurity concentration of the first conductivity type than the first semiconductor region. The second electrode is provided on the second semiconductor region and is electrically connected to the second semiconductor region. The third electrode is provided on the third and fourth semiconductor regions, is electrically connected to the third and fourth semiconductor regions, and is separated from the second electrode.


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