The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Jun. 03, 2020
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Jun Ogi, Kanagawa, JP;

Junichiro Fujimagari, Kanagawa, JP;

Susumu Inoue, Kanagawa, JP;

Atsushi Fujiwara, Kumamoto, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 27/146 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 27/1469 (2013.01); H01L 27/14627 (2013.01); H01L 27/14632 (2013.01); H01L 27/14634 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/146 (2013.01); H01L 2924/18161 (2013.01);
Abstract

There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.


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