The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Mar. 02, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Hiroshi Nakaki, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 23/528 (2006.01); H01L 27/1157 (2017.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); G11C 16/04 (2006.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/0483 (2013.01); H01L 23/528 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01);
Abstract

According to one embodiment, storage device comprises first wiring layers stacked along a first direction and a memory pillar extending through the first wiring layers. The memory pillar includes a first semiconductor layer. A second wiring layer is above an upper end of the memory pillar. A second semiconductor layer has a first portion between the first semiconductor layer and the second wiring layer and a second portion extending away from the first semiconductor layer. A first insulating layer is between the first portion and the second wiring layer in first direction, and also between the second portion and the second wiring layer in a second direction intersecting the first direction.


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