The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Aug. 29, 2019
Applicant:
Quantum-si Incorporated, Guilford, CT (US);
Inventors:
Gerard Schmid, Guilford, CT (US);
James Beach, Austin, TX (US);
Assignee:
Quantum-Si Incorporated, Guilford, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01L 3/00 (2006.01); B81C 1/00 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); G01N 33/487 (2006.01); G01N 33/58 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823493 (2013.01); B01L 3/50 (2013.01); B01L 3/5085 (2013.01); B81C 1/00047 (2013.01); B81C 1/00206 (2013.01); G01N 33/48707 (2013.01); G01N 33/582 (2013.01); H01L 21/0228 (2013.01); H01L 21/02123 (2013.01); H01L 21/02172 (2013.01); H01L 21/02274 (2013.01); H01L 21/823468 (2013.01);
Abstract
Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.