The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Jun. 19, 2020
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Carsten von Koblinski, Villach, AT;
Tobias Polster, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76886 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H01L 23/3157 (2013.01); H01L 23/528 (2013.01);
Abstract
A method of manufacturing a semiconductor wafer having a roughened metallization layer surface is described. The method includes immersing the semiconductor wafer in an electrolytic bath. Gas bubbles are generated in the electrolytic bath. A surface of a metallization layer on the semiconductor wafer is electrochemically roughened in the presence of the gas bubbles by applying a reversing voltage between the metallization layer and an electrode of the electrolytic bath.