The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Jan. 14, 2019
Applicant:

Laser Systems & Solutions of Europe, Gennevilliers, FR;

Inventors:

Karim Huet, Gennevilliers, FR;

Fulvio Mazzamuto, Gennevilliers, FR;

Cyril Dutems, Gennevilliers, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/268 (2006.01); B23K 26/0622 (2014.01); B23K 26/064 (2014.01); B23K 26/067 (2006.01); G02B 27/28 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/268 (2013.01); B23K 26/064 (2015.10); B23K 26/067 (2013.01); B23K 26/0622 (2015.10); G02B 27/286 (2013.01); B23K 2101/40 (2018.08);
Abstract

Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.


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