The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Apr. 03, 2018
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Tsubasa Honke, Osaka, JP;

Kyoko Okita, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/36 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); C30B 29/36 (2013.01); H01L 21/304 (2013.01);
Abstract

A TTV of the silicon carbide substrate is less than or equal to 3 μm. The first main surface includes a first central region surrounded by a square having each side of 90 mm. An intersection of diagonal lines of the first central region coincides with a center of the first main surface. The first central region is constituted of nine square regions each having each side of 30 mm. A maximum LTV among the nine square regions is less than or equal to 1 μm. An arithmetic mean roughness Sa in a second central region is less than or equal to 0.1 nm, the second central region being surrounded by a square centering on the intersection and having each side of 250 μm.


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