The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Oct. 22, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Johanes F. Swenberg, Los Gatos, CA (US);
Taewan Kim, San Jose, CA (US);
Christopher S. Olsen, Fremont, CA (US);
Erika Hansen, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiOon SiNfilms, embodiments in this disclosure use a thermal combustion of a ternary mixture of H+O+NO to gain SiOout of Si containing compounds. Using this mixture provides a lower growth in comparison with using only Hand O, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiOoxidation layers, specifically for ONO replacement tunneling gate formation.