The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Mar. 18, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sang-Won Park, Seoul, KR;
Sang-Wan Nam, Hwaseong-si, KR;
Ji Yeon Shin, Hwaseong-si, KR;
Won Bo Shim, Seoul, KR;
Jung-Yun Yun, Seoul, KR;
Ji Ho Cho, Suwon-si, KR;
Sang Gi Hong, Anyang-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method for programming a non-volatile memory device is provided. The method comprises applying a program word line voltage with a voltage level changed stepwise to a selected word line connected to a plurality of memory cells, and applying a program bit line voltage to a first bit line of a plurality of bit lines connected to a plurality of first memory cells, while the program word line voltage is applied to the selected word line. The program bit line voltage transitions from a first voltage level to one of a program inhibit voltage level, a program voltage level, and a second voltage level. The first and second voltage levels are between the program inhibit voltage level and program voltage level.