The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Jan. 31, 2019
Massachusetts Institute of Technology, Cambridge, MA (US);
Jeffrey Chou, Walnut Creek, CA (US);
Vladimir Liberman, Reading, MA (US);
Juejun Hu, Newton, MA (US);
Yifei Zhang, Cambridge, MA (US);
William Herzog, Bedford, MA (US);
Jason Stewart, Stow, MA (US);
Christopher Roberts, Amesbury, MI (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
Alloys of GeSbSeTe (GSST) can be used to make actively tunable infrared transmission filters that are small, fast, and solid-state. These filters can be used for hyperspectral imaging, 3D LIDAR, portable bio/chem sensing systems, thermal emission control, and tunable filters. GSST is a low-loss phase-change material that can switch from a low-index (n=3), amorphous state to a high-index (n=4.5), hexagonal state with low loss (k<0.3) over a wavelength range of 2-10 microns or more. The GSST thickness can be selected to provide pure phase modulation, pure amplitude modulation, or coupled phase and amplitude modulation. GSST can be switched thermally in an oven, optically with visible light, or electrically via Joule heating at speeds from kilohertz to Gigahertz. It operates with reversible and polarization independent transmission switching over a wide incident angle (e.g., 0-60 degrees).