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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11320099 B1

PDFFull Text
Date of Patent:
May. 03, 2022

Filed:

Jul. 21, 2017

Wavelength conversion member and production method therefor

Applicant:

Nippon Electric Glass Co., Ltd., Otsu, JP;

Inventors:

Hiroyuki Shimizu, Otsu, JP;

Hideki Asano, Otsu, JP;

Takashi Murata, Otsu, JP;

Assignee:

NIPPON ELECTRIC GLASS CO., LTD., Shiga, JP;

Attorney:

Keating and Bennett, LLP

Primary Examiner:

Christopher M Raabe

Int. Cl.
CPC ...
C03B 19/06 (2006.01); F21K 9/64 (2016.01); C03C 4/12 (2006.01); C03C 14/00 (2006.01); F21V 9/08 (2018.01); H01L 33/50 (2010.01); F21V 9/00 (2018.01); G02B 5/20 (2006.01);
U.S. Cl.
CPC ...
F21K 9/64 (2016.08); C03B 19/06 (2013.01); C03C 4/12 (2013.01); C03C 14/00 (2013.01); C03C 14/004 (2013.01); F21V 9/00 (2013.01); F21V 9/08 (2013.01); G02B 5/20 (2013.01); H01L 33/50 (2013.01);
Abstract

Provided is a wavelength conversion member that can be adjusted in chromaticity readily and with high accuracy and a production method for the wavelength conversion member. A wavelength conversion memberhaving a first principal surfaceand a second principal surfaceopposed to each other includes a glass matrixand phosphor particlesdisposed in the glass matrix, wherein a concentration of the phosphor particlesin the first principal surfaceis higher than a concentration of the phosphor particlesin a portion 20 μm inward from the first principal surface, a concentration of the phosphor particlesin the second principal surfaceis lower than a concentration of the phosphor particlesin a portion 20 μm inward from the second principal surface, and the concentration of the phosphor particlesin the first principal surfaceis higher than the concentration of the phosphor particlesin the second principal surface

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