The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Feb. 15, 2018
Sumco Corporation, Tokyo, JP;
Takahiro Abe, Tokyo, JP;
SUMCO CORPORATION, Tokyo, JP;
Abstract
Provided is a method for pulling up and growing, by the Czochralski method, a silicon monocrystal from a melt obtained by fusing a silicon raw material for crystals within a quartz crucible. When the inner wall of the quartz crucible is made of a synthetic quartz layer, a gel-like liquid including a devitrification accelerator, a thickening agent, and a solvent is applied to the bottom surface of the quartz crucible inner wall or to both the bottom surface and the lateral surface thereof prior to filling the silicon raw material for crystals into the quartz crucible, whereas when the inner wall of the quartz crucible is made of a natural quartz layer, the gel-like liquid is applied to both the bottom surface and the lateral surface of the inner wall of the quartz crucible prior to filling the silicon raw material for crystals into the quartz crucible.