The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Jun. 06, 2014
Applicant:

President and Fellows of Harvard College, Cambridge, MA (US);

Inventor:

Roy Gerald Gordon, Cambridge, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09D 7/00 (2018.01); C09D 7/63 (2018.01); C23C 16/18 (2006.01); C23C 16/34 (2006.01); C07F 5/00 (2006.01); C07F 13/00 (2006.01); C07F 15/00 (2006.01); C07F 1/00 (2006.01); C07F 15/04 (2006.01); C07F 19/00 (2006.01); C07F 15/06 (2006.01); C07F 7/22 (2006.01); C08K 5/56 (2006.01); C23C 16/448 (2006.01);
U.S. Cl.
CPC ...
C09D 7/63 (2018.01); C07F 1/005 (2013.01); C07F 5/003 (2013.01); C07F 7/2284 (2013.01); C07F 13/005 (2013.01); C07F 15/0046 (2013.01); C07F 15/045 (2013.01); C07F 15/065 (2013.01); C07F 19/005 (2013.01); C08K 5/56 (2013.01); C23C 16/18 (2013.01); C23C 16/34 (2013.01); C23C 16/4481 (2013.01);
Abstract

This disclosure relates to tertiary amine solutions of metal precursors used for chemical vapor deposition or atomic layer deposition. The tertiary amine solutions have many advantages. They dissolve high concentrations of non-polar precursors without reacting with them. They do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. Vaporization rates can be chosen so that the solute and solvent may be evaporated simultaneously, have high flash points, and low flammability. Small droplets may be formed easily which facilitate rapid evaporation without decomposition of he dissolved metal precursor to supply vapors for chemical vapor deposition or atomic layer deposition processes.


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