The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Jun. 09, 2017
Applicant:

Battelle Memorial Institute, Richland, WA (US);

Inventors:

Praveen K. Thallapally, Richland, WA (US);

John D. Vienna, Richland, WA (US);

Assignee:

BATTELLE MEMORIAL INSTITUTE, Richland, WA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B01D 53/02 (2006.01); B01D 53/04 (2006.01); B01J 20/22 (2006.01); F17C 11/00 (2006.01); B01D 19/00 (2006.01); B01D 59/26 (2006.01);
U.S. Cl.
CPC ...
B01D 53/0415 (2013.01); B01D 19/0005 (2013.01); B01D 53/02 (2013.01); B01D 59/26 (2013.01); B01J 20/226 (2013.01); F17C 11/00 (2013.01); B01D 2253/204 (2013.01); B01D 2256/18 (2013.01); B01D 2257/102 (2013.01); B01D 2257/104 (2013.01); B01D 2257/11 (2013.01); B01D 2257/40 (2013.01); B01D 2257/504 (2013.01); B01D 2258/0216 (2013.01); Y02C 20/10 (2013.01); Y02C 20/40 (2020.08);
Abstract

Methods and materials for the selective capture and storage of preselected materials from gas streams using metal organic framework (MOF) materials are described. In various embodiments preselected target material gases could include noble gasses such as Kr, Xe, Rn, Arultramicro to mesopore frameworks for selective separation and storage of noble gases, other gasses such as Ior other particular isotopes either naturally occurring or man-made, or another preselected gas capture material such as a target material for legal, regulatory or treaty compliance, or a preselected material from a particular process such as a cleaning or etching agent from semiconducting or microelectronic manufacture, or a portion of an anesthetic gas such as nitrous oxide, isoflurane, sevoflurane or a fluorinated ethers.


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