The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Mar. 21, 2019
Applicants:

Sanyo Electric Co., Ltd., Daito, JP;

Panasonic Corporation, Kadoma, JP;

Inventors:

Yukitoshi Uehara, Aichi, JP;

Kouhei Tuduki, Hyogo, JP;

Yoshikazu Miyachi, Hyogo, JP;

Shinya Miyazaki, Hyogo, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 10/0569 (2010.01); H01M 4/583 (2010.01); H01M 4/48 (2010.01); H01M 4/36 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 10/0569 (2013.01); H01M 4/366 (2013.01); H01M 4/48 (2013.01); H01M 4/583 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01); H01M 2220/20 (2013.01);
Abstract

A secondary battery having a suppressed decrease in capacity, even through rapid charging, includes: a positive electrode; a negative electrode including a negative electrode current collector and a negative electrode active material layer formed thereon containing a carbon material and silicon compounds; and an electrolyte solution containing nonaqueous solvents including 10 volume % or more of fluoroethylene carbonate. When: a surface of the negative electrode active material layer that faces the negative electrode current collector and the back side thereof are set as first and second surfaces, respectively; a thickness of the negative electrode active material layer is set as T; and regions from the first and the second surfaces to a depth of 0.5T are set as lower and upper layer portions, respectively, mass M1 of the silicon compounds in the lower layer portion is larger than mass M2 of the silicon compounds in the upper layer portion.


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