The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
May. 09, 2020
Xidian University, Xi'an, CN;
Qingwen Song, Xi'an, CN;
Xiaoyan Tang, Xi'an, CN;
Yuming Zhang, Xi'an, CN;
Hao Yuan, Xi'an, CN;
Chao Han, Xi'an, CN;
XIDIAN UNIVERSITY, Xi'An, CN;
Abstract
A junction barrier schottky (JBS) diode is provided and includes: a bottom metal layer, a N-type substrate layer and a N-type epitaxial layer sequentially arranged in that order from bottom to top, P-type ion injection regions are disposed on an upper surface of the N-type epitaxial layer, distances of the P-type ion injection regions are gradually increased along a direction from an edge to a center of the JBS diode; an isolation dielectric layer is arranged on a periphery of the upper surface of the N-type epitaxial layer, an top metal layer is arranged on the upper surface of the N-type epitaxial layer and an upper surface of the isolation dielectric layer and further is in contact with the P-type ion injection regions. The JBS diode can effectively inhibit an occurrence of local electromigration and improve a device reliability.