The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Sep. 07, 2018
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;

Inventors:

Huafei Xie, Guangdong, CN;

Shujhih Chen, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78684 (2013.01); H01L 29/66045 (2013.01); H01L 29/66068 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01);
Abstract

A thin-film transistor and a manufacturing method thereof are provided, and the manufacturing method includes: forming a source electrode, a drain electrode and a planarization layer on a substrate, and patterning the planarization layer to form a first portion disposed between the source electrode and the drain electrode, a second portion disposed at a side of the source drain, and a third portion disposed at a side of the drain electrode. Upper surfaces of all the first portion, the second portion, and the third surface are flush with top portions of both the source electrode and the drain electrode.


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