The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Nov. 13, 2018
Rohm Co., Ltd., Kyoto, JP;
Taketoshi Tanaka, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device () includes a substrate (), an electron transit layer () disposed on the substrate (), and an electron supply layer () disposed on the electron supply layer (). The electron transit layer () includes a conductive path forming layer () in contact with the electron supply layer (), a first semiconductor region (first nitride semiconductor layer) () containing an acceptor-type impurity, and a second semiconductor region (second nitride semiconductor layer) () disposed at a position closer to the conductive path forming layer () than the first semiconductor region () and containing an acceptor-type impurity. The first semiconductor region () has a higher acceptor density than the second semiconductor region ().