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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11316017 B1

PDFFull Text
Date of Patent:
Apr. 26, 2022

Filed:

Sep. 27, 2018

Field-effect transistor with a total control of the electrical conductivity on its channel

Applicant:

Luxembourg Institute of Science and Technology (List), Esch-sur-Alzette, LU;

Inventor:

Damien Lenoble, Wellin, BE;

Assignee:

Luxembourg Institute Of Science and Technology (LIST), Esch-sur-Alzette, LU;

Attorney:

Sandberg Phoenix & von Gontard P.C.

Primary Examiner:

Reema Patel

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 21/16 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/242 (2013.01); H01L 21/02565 (2013.01); H01L 21/02579 (2013.01); H01L 21/165 (2013.01); H01L 27/1211 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01);
Abstract

The first object of the invention is directed to field-effect gate transistor comprising (a) a substrate, (b) a source terminal, (c) a drain terminal, and (d) a channel between the source terminal and the drain terminal, the channel being a layer of CuCrOin which the y/x ratio is superior to 1. The field-effect gate transistor is remarkable in that the channel of CuCrOpresents a gradient of holes concentration. The second object of the invention is directed to a method for laser annealing a field-effect gate transistor in accordance with the first object of the invention.

Find Patent Forward Citations

Lenoble, Damien. (2022). Field-effect transistor with a total control of the electrical conductivity on its channel (U.S. Patent No. 11316017). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11316017

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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