The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

May. 26, 2020
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jaebum Han, Yongin-si, KR;

Younggil Park, Yongin-si, KR;

Junghwa Park, Yongin-si, KR;

Nari Ahn, Yongin-si, KR;

Sooim Jeong, Yongin-si, KR;

Kinam Kim, Yongin-si, KR;

Moonsung Kim, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 27/3265 (2013.01); H01L 27/3272 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78633 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01);
Abstract

A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.


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