The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Sep. 08, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Chiang-Lin Shih, New Taipei, TW;

Tseng-Fu Lu, New Taipei, TW;

Jeng-Ping Lin, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/535 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10802 (2013.01); H01L 21/743 (2013.01); H01L 23/535 (2013.01);
Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure comprises a substrate having a first top surface. An active region is surrounded by an isolation region in the substrate. A buried power line and a buried signal line are disposed within the substrate and in the active region. A first circuit layer is disposed on the first top surface of the substrate to cover the buried power line and the buried signal line. A second circuit layer is disposed on the first top surface of the substrate and separated from the first circuit layer. A cell capacitor is disposed on and electrically coupled to the first circuit layer.


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