The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

May. 12, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Sri M. Sri-Jayantha, Ossining, NY (US);

Soojae Park, Asan-Si, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4857 (2013.01); H01L 23/49822 (2013.01); H01L 24/11 (2013.01); H01L 2924/3511 (2013.01);
Abstract

The substrate includes one or more bottom circuit (BC) layers disposed one upon another and one or more front circuit (FC) layers disposed one upon another. The FC layers are disposed on the BC layers. In some embodiments, there are one or more core layers disposed between the FC and BC layers. One or more soft zones are located within and penetrate through one or more of the FC layers. Each soft zone has a soft zone volume which is made of one or more component volumes located in each of one or more of the FC layers. Each soft zone component volume has a soft zone cross sectional area. The soft zone cross sectional areas are located inside a chip boundary projection. The chip boundary projection is a vertical projection of one or more sides of a semiconductor chip through the FC layers. The soft zone volume contains a soft zone material with a Young's modulus that is less than 100 GigaPascals (GPa). Alternative embodiments are presented with outside soft zones outside the chip boundary projection.


Find Patent Forward Citations

Loading…