The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Jun. 23, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Bongkil Jung, Seoul, KR;

Dongjin Shin, Hwaseong-si, KR;

Manjae Yang, Hwaseong-si, KR;

Byungsun Lee, Suwon-si, KR;

Dongsu Jang, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 27/00 (2006.01); G11C 5/14 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 27/005 (2013.01); G11C 5/147 (2013.01); G11C 7/1063 (2013.01); G11C 7/1069 (2013.01); G11C 7/1096 (2013.01);
Abstract

A non-volatile memory device includes a first and a second memory regions including first and second memory cells and first and second analog circuits, respectively; a control logic circuit determining on/off states of the analog circuits, and converting an external power supply voltage into an internal operating voltage for operation of each of the memory cells; and input/output circuit selecting an input/output memory region for performing input/output of data using the internal operating voltage, wherein input/output of data for the first and second memory cells are sequentially performed, and at least one of the each of the first and second analog circuits are turned on together while the input/output of data for the first memory cells is performed.


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