The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Jan. 25, 2021
Applicant:

Headway Technologies, Inc., Milpitas, CA (US);

Inventors:

Koji Shimazawa, Cupertino, CA (US);

Weihao Xu, San Jose, CA (US);

Ken Fujii, San Jose, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 11/105 (2006.01); G11B 13/08 (2006.01); G11B 5/012 (2006.01); G11B 5/00 (2006.01); G11B 5/60 (2006.01); G11B 5/48 (2006.01);
U.S. Cl.
CPC ...
G11B 13/08 (2013.01); G11B 5/012 (2013.01); G11B 5/4866 (2013.01); G11B 5/6088 (2013.01); G11B 2005/0021 (2013.01);
Abstract

A plasmon generator (PG) is formed between a waveguide and main pole, and has a front portion (Au/Rh bilayer) wherein the upper Rh layer has a peg shape at an air bearing surface (ABS), and a tapered backside that is separated from a PG back portion by a dielectric spacer. The lower Au layer has a front side recessed from the ABS and curved sides self-aligned with the Rh layer sides. A key feature is that the back section of lower Au layer curved side forms a smaller angle with a plane aligned orthogonal to the ABS than a front section thereof thereby selectively enabling a deformation of the back end of the Au layer during a heat treatment to >300° C. at the wafer level. Accordingly, the front end of the lower Au layer is densified and provides an improved heat sink to improve reliability and area density capability (ADC).


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