The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Sep. 12, 2018
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;

Inventors:

Honam Kwon, Kawasaki, JP;

Ikuo Fujiwara, Yokohama, JP;

Kazuhiro Suzuki, Meguro, JP;

Keita Sasaki, Yokohama, JP;

Yuki Nobusa, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 7/4863 (2020.01); G01S 17/10 (2020.01); H01L 27/144 (2006.01); G01S 17/08 (2006.01); H01L 31/02 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
G01S 7/4863 (2013.01); G01S 17/08 (2013.01); G01S 17/10 (2013.01); H01L 27/1446 (2013.01); H01L 31/02027 (2013.01); H01L 31/107 (2013.01);
Abstract

A photodetector includes a plurality of first light detection elements having a first driving voltage range, the first light detection elements including first semiconductor layers having a first conductivity type and second semiconductor layers having a second conductivity type different from the first conductivity type; and a second light detection element having a second driving voltage range different from the first driving voltage range, the second light detection element including a third semiconductor layer having the first conductivity type and a fourth semiconductor layer having the second conductivity type.


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