The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Jul. 31, 2020
Applicant:

X-fab France, Corbeil Essonnes, FR;

Inventors:

Faiz Dahmani, La Varenne Saint-Hilaire, FR;

Jean-Pierre Cornier, Draveil, FR;

Philippe Becquet, Pringy, FR;

Yannick Legall, Savigny le Temple, FR;

Marc Cotto, Verrieres-le-Buisson, FR;

Assignee:

X-FAB FRANCE, Corbeil Essonnes, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/14 (2006.01); C23C 14/34 (2006.01); C23C 14/54 (2006.01); C23C 14/56 (2006.01); C23C 14/58 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 14/14 (2013.01); C23C 14/3457 (2013.01); C23C 14/54 (2013.01); C23C 14/56 (2013.01); C23C 14/5806 (2013.01); H01J 37/32082 (2013.01);
Abstract

A method for forming a low-resistivity tantalum thin film having the following steps: depositing a tantalum layer on a substrate, the tantalum of the layer having a β phase, treating the deposited tantalum layer by exposure to a radio frequency hydrogen plasma, such that the layer has tantalum in a mixed β-α phase, at least partially desorbing the hydrogen by carrying out at least one of the following steps: exposure to a radio frequency inert gas plasma, and thermal annealing. The treatment step being configured such that the tantalum layer is subjected to temperatures of less than or equal to 300° C.


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