The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Apr. 08, 2020
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Ryosuke Sakashita, Ibaraki, JP;

Yoshitaka Shibuya, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 41/187 (2006.01); H01L 41/316 (2013.01);
U.S. Cl.
CPC ...
C23C 14/088 (2013.01); C23C 14/3407 (2013.01); H01J 37/3426 (2013.01); H01L 41/1873 (2013.01); H01L 41/316 (2013.01);
Abstract

A sputtering target formed from a potassium sodium niobate sintered body to which a dopant has been added; as a dopant, the sputtering target includes one or more types among Li, Mg, Ca, Sr, Ba, Bi, Sb, V, In, Ta, Mo, W, Cr, Ti, Zr, Hf, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cu, Zn, Ag, Mn, Fe, Co, Ni, Al, Si, Ge, Sn, and Ga; and a variation coefficient of a dopant concentration in a plane of the sputtering target is 0.12 or less. In terms of suppressing the generation of particles, provided is a sputtering target which is formed from a sintered body that includes potassium sodium niobate and to which a dopant has been added.


Find Patent Forward Citations

Loading…