The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Jul. 31, 2020
Applicant:

GM Global Technology Operations Llc, Detroit, MI (US);

Inventors:

Jongchang Kang, Moorpark, CA (US);

Ara Kurdoghlian, La Canada, CA (US);

Mehran Mokhtari, Tarzana, CA (US);

Igal Bilik, Rehovot, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 11/20 (2006.01); H01P 1/18 (2006.01); H01Q 3/36 (2006.01); H01P 1/185 (2006.01); H03H 11/16 (2006.01);
U.S. Cl.
CPC ...
H03H 11/20 (2013.01); H01P 1/18 (2013.01); H01P 1/185 (2013.01); H01Q 3/36 (2013.01); H03H 11/16 (2013.01);
Abstract

The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back gate well control, the field effect transistor being further configured to couple an alternating current radar signal between the drain and the source and to adjust a phase of the alternating current radar in response to first variable voltage applied to the gate and the second variable voltage applied to the back gate well control.


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