The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Apr. 17, 2018
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Hiroshi Nakajima, Kanagawa, JP;

Tatsushi Hamaguchi, Kanagawa, JP;

Jugo Mitomo, Kanagawa, JP;

Susumu Sato, Kanagawa, JP;

Masamichi Ito, Miyagi, JP;

Hidekazu Kawanishi, Tokyo, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/042 (2006.01); H01S 5/02 (2006.01); H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18369 (2013.01); H01S 5/021 (2013.01); H01S 5/0213 (2013.01); H01S 5/0217 (2013.01); H01S 5/04253 (2019.08); H01S 5/04257 (2019.08); H01S 5/3063 (2013.01); H01S 5/34333 (2013.01); H01S 2301/173 (2013.01); H01S 2304/04 (2013.01);
Abstract

A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.


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