The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11309510 B1

Date of Patent:

Apr. 19, 2022

Filed:

Jul. 14, 2020

Light emitting device (led) and multi-stacked led including charge generation junction (cgj) layer, and manufacturing method thereof

Applicant:

University-industry Cooperation Group of Kyung Hee University, Yongin-si, KR;

Inventors:

Jin Jang, Seoul, KR;

Jeong Gi Kim, Seoul, KR;

Assignee:

UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Yongin-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Caleb E Henry

Int. Cl.

CPC ...

H01L 29/08 (2006.01); H01L 51/50 (2006.01); H01L 51/56 (2006.01); H01L 51/52 (2006.01); H01L 27/15 (2006.01);

U.S. Cl.

CPC ...

H01L 51/5056 (2013.01); H01L 27/156 (2013.01); H01L 51/502 (2013.01); H01L 51/5206 (2013.01); H01L 51/5221 (2013.01); H01L 51/56 (2013.01); H01L 2251/303 (2013.01);

Abstract

Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: CuSnS—(Ga)O. Here, 0.2<x<1.5.

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