The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Nov. 27, 2018
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Peng Chen, Beijing, CN;

Xinxia Zhang, Beijing, CN;

Hengbin Li, Beijing, CN;

Guolei Wang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/34 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 27/156 (2013.01); H01L 33/005 (2013.01); H01L 33/34 (2013.01); H01L 33/38 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method of fabricating a micro light emitting diode (micro LED) array substrate having a plurality of micro LEDs. The method includes forming a plurality of signal lines on a base substrate; depositing a semiconductor material on the base substrate to form a semiconductor material layer; and patterning the semiconductor material layer to form a semiconductor layer of the plurality of micro LEDs. A surface of the plurality of signal lines away from the base substrate is uncovered during depositing the semiconductor material. The plurality of signal lines form a grid for facilitating epitaxial growth of the semiconductor material.


Find Patent Forward Citations

Loading…