The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Jan. 05, 2017
Applicant:

Semicon Light Co., Ltd., Gyeonggi-do, KR;

Inventors:

Soo Kun Jeon, Gyeonggi-do, KR;

Geun Mo Jin, Gyeonggi-do, KR;

Jun Chun Park, Gyeonggi-do, KR;

Yeon Ho Jeong, Gyeonggi-do, KR;

Il Gyun Choi, Gyeonggi-do, KR;

Assignee:

SEMICON LIGHT CO., LTD., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 27/153 (2013.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/325 (2013.01); H01L 33/387 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.


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