The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Sep. 23, 2019
Analog Devices, Inc., Norwood, MA (US);
Mohamed Azize, Medford, MA (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
An inexpensive IR photodetector assembly that can provide high performance in SWIR applications, such as LIDAR. The photodetector assembly can operate as a photodiode, a phototransistor, or can include both a photodiode and a phototransistor. The hybrid photodetector can be composed of one or more absorber layer materials from a first semiconductor family, e.g., p-type InGaAs, laying on one or more wide-band gap semiconductor transducer layer materials from a second semiconductor family, e.g., aluminum gallium nitride (AlGaN) and gallium nitride (GaN), or AlGaN/n-GaN. As such, the absorber layer material and the wide band gap materials can be from two different semiconductor families, making the IR photodetector a hybrid of semiconductor families. After shining IR light onto the absorber layer material, the photo-generated electron-hole pairs can be collected as photocurrent in the photo-voltaic mode.