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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11309444 B1

PDFFull Text
Date of Patent:
Apr. 19, 2022

Filed:

Nov. 22, 2021

Microstructure enhanced absorption photosensitive devices

Applicant:

W&wsens Devices, Inc., Los Altos, CA (US);

Inventors:

Shih-Yuan Wang, Palo Alto, CA (US);

Shih-Ping Wang, Los Altos, CA (US);

Assignee:

W&W Sens Devices, Inc., Los Altos, CA (US);

Attorney:

Wissing Miller LLP

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/0352 (2006.01); H01L 31/075 (2012.01); H01L 31/105 (2006.01); G02B 6/136 (2006.01); H01L 31/028 (2006.01); H01L 31/0224 (2006.01); H01L 31/0312 (2006.01); H01L 31/036 (2006.01); H01L 31/077 (2012.01); H01L 31/18 (2006.01); H01L 31/107 (2006.01); H01L 31/054 (2014.01); G02B 6/122 (2006.01); H01L 23/66 (2006.01); H01L 31/02 (2006.01); H01L 31/0236 (2006.01); H01L 31/024 (2014.01); H01L 31/0304 (2006.01); H01L 31/0745 (2012.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035272 (2013.01); G02B 6/122 (2013.01); G02B 6/136 (2013.01); H01L 23/66 (2013.01); H01L 31/024 (2013.01); H01L 31/02005 (2013.01); H01L 31/028 (2013.01); H01L 31/02016 (2013.01); H01L 31/02019 (2013.01); H01L 31/0284 (2013.01); H01L 31/02327 (2013.01); H01L 31/02363 (2013.01); H01L 31/022408 (2013.01); H01L 31/022475 (2013.01); H01L 31/0304 (2013.01); H01L 31/036 (2013.01); H01L 31/0312 (2013.01); H01L 31/03046 (2013.01); H01L 31/035209 (2013.01); H01L 31/035227 (2013.01); H01L 31/035281 (2013.01); H01L 31/054 (2014.12); H01L 31/075 (2013.01); H01L 31/077 (2013.01); H01L 31/0745 (2013.01); H01L 31/105 (2013.01); H01L 31/107 (2013.01); H01L 31/1055 (2013.01); H01L 31/1075 (2013.01); H01L 31/1804 (2013.01); H01L 31/184 (2013.01); H01L 31/1808 (2013.01); H01L 31/1812 (2013.01); H01L 31/1844 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12176 (2013.01); H01L 2223/6627 (2013.01); Y02E 10/52 (2013.01); Y02E 10/548 (2013.01);
Abstract

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Find Patent Forward Citations

Wang, Shih-Yuan. (2022). Microstructure enhanced absorption photosensitive devices (U.S. Patent No. 11309444). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11309444

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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