The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Aug. 28, 2020
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Seongil Im, Seoul, KR;
Sung Jin Yang, Seoul, KR;
Abstract
Provided are a vertical Schottky barrier diode using a two-dimensional layered semiconductor and a fabrication method thereof, the vertical Schottky barrier diode having excellent response characteristics in a high frequency region and capable of being directly fabricated from a material having a low melting point such as glass or plastic because its fabrication process is performed at a relatively low temperature. The vertical Schottky barrier diode includes: an ohmic contact layer formed of a metal; a two-dimensional layered semiconductor formed of two-dimensional transition metal dichalcogenides (TMDs) on one surface of the ohmic contact layer; a Schottky contact layer formed on one surface of the two-dimensional layered semiconductor; and a non-conductive layer formed on the other surface of the ohmic contact layer or one surface of the Schottky contact layer.