The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Mar. 29, 2018
Applicant:
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Inventor:
Shunichi Nakamura, Saitama, JP;
Assignee:
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7804 (2013.01); H01L 23/5228 (2013.01); H01L 27/088 (2013.01); H01L 27/0814 (2013.01); H01L 29/7801 (2013.01); H01L 29/782 (2013.01); H01L 29/7817 (2013.01); H01L 29/7818 (2013.01); H01L 29/7819 (2013.01); H01L 29/7821 (2013.01); H01L 29/7823 (2013.01); H01L 29/7826 (2013.01);
Abstract
A wide gap semiconductor device has: a first MOSFET region (M) having a first gate electrodeand a first source regionprovided in a first well regionmade of a second conductivity type; a second MOSFET region (M) provided below a gate padand having a second gate electrodeand a second source regionprovided in a second well regionmade of the second conductivity type; and a built-in diode region electrically connected to the second gate electrode. The second source regionof the second MOSFET region (M) is electrically connected to the gate pad