The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Jun. 03, 2020
Applicant:
Db Hitek Co., Ltd., Seoul, KR;
Inventor:
Young-Seok Kim, Seongnam-si, KR;
Assignee:
DB HiTek Co., Ltd., Seoul, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/1095 (2013.01); H01L 29/41708 (2013.01); H01L 29/66325 (2013.01);
Abstract
The present invention relates to an insulated gate bipolar transistor (IGBT) and, more particularly, to an insulated gate bipolar transistor that has multiple mesas having different widths, configured to promote the buildup and accumulation of hole carriers, thereby facilitating relatively easy subsequent processing, while maximizing conductivity modulation.